Hydrogen Adsorption Mechanism of SiC Nanocones
نویسندگان
چکیده
منابع مشابه
Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond.
We perform first-principles calculations to explore the physical origin of hydrogen-induced semiconductor surface metallization observed in beta-SiC(001)-3 x 2 surface. We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridge bonds (i.e., Si-H-Si complex). The hydrogen strengthens the weak Si-Si dimers in the subsurfa...
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Adsorption processes of hydrogen molecules on the Si(001)-(2× 1) and C(001)-(2× 1) surfaces are discussed in light of our previous studies of H2 adsorption on the related SiC(001)-c(4× 2) surface. Very amazingly, there are pathways above the latter on which hydrogen molecules can adsorb dissociatively at room temperature. One of these pathways has not been considered before for adsorption of H2...
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ژورنال
عنوان ژورنال: Graphene
سال: 2020
ISSN: 2169-3439,2169-3471
DOI: 10.4236/graphene.2020.91001